bss8402dw complimentary pair enhancement mode mosfets 1 2 3 4 5 6 1 2 3 4 5 6 features applications maximum ratings - total device rating symbol value units this space-efficient device contains an electrically-isolated complimentary pair of enhancement-mode mosfets (one n-channel and one p-channel). it comes in a very small sot-363 (sc70-6l) package. this device is ideal for portable applications where board space is at a premium. low on-resistance available in lead-free plating (100% matte tin finish) low gate threshold voltage fast switching switching power supplies hand-held computers, pdas total power dissipation (note 1) operating junction and storage temperature range 9/15/2005 page 1 www.panjit.com 200 mw c -55 to +150 p t, t d stg t = 25c unless otherwise noted j j sot- 363 123 654 note 1. fr-5 board 1.0 x 0.75 x 0.062 inch with minimum recommended pad layout complimentary pairs maximum ratings n - channel - q , 2n7002 rating symbol value units drain-source voltage drain-gate voltage r < 1.0mohm gate-source voltage - continuous drain current - continuous (note 1) 60 v v 60 v 20 ma 115 v v v i dss dgr gss d t = 25c unless otherwise noted j 1 gs maximum ratings p - channel - q , bss84 rating symbol value units drain-source voltage drain-gate voltage r < 20kohm gate-source voltage - continuous drain current - continuous (note 1) -50 v v -50 v 20 ma 130 v v v i dss dgr gss d t = 25c unless otherwise noted j 2 gs thermal characteristics characteristic symbol units thja thermal resistance, junction to ambient (note 1) 625 value r c/w qq 12 marking code: s82
ds v = 10v, i = 0.2a ds gs v = 20v, v = 0v www.panjit.com 9/15/2005 page 2 electrical characteristics - n-channel - q , 2n7002 parameter symbol min units drain-source breakdown voltage t = 25c unless otherwise noted conditions typ max bv dss d i = 10a, v = 0v zero gate voltage drain curren t i ds s v = 60v, v = 0 ds gate-body leakage 60 80 - v - - 1.0 - - 500 a - 10 na - bss8402dw off characteristics (note 2) i gss t =125c gs j j j d parameter symbol min units gate threshold voltage conditions typ max v gs(th) ds v = v , i = 250a forward transconductance 1.0 1.6 2.5 v on characteristics (note 2) g fs gs d 0.08 - - s static drain-source on-resistanc e r ds(on) gs v = 5v, i = 0.05a - 1.8 4.5 d parameter symbol min units input capacitance conditions typ max c iss reverse transfer capacitance - - 50 pf dynamic characteristics c rss - - 5.0 pf output capacitance c oss ds v = 25v, v = 0v, f = 1.0mhz - - 25 pf gs parameter symbol min units turn-on delay time conditions typ max t d(on) - - 20 ns switching characteristics turn-off delay time - - 20 ns t d(off) v =30v, i =0.2a, r =150ohm r = 25ohm, v = 10v dd d gen gen note 2. short duration test pulse used to minimize self-heating gs t =25c l 1 v = 10v, i = 0.5a gs d - 2.0 7.0 ohms 0.5 1.65 - a ds gs v = 10v, v = 7.5v on-state drain current i d(on )
ds v = -25v, i = -0.1a ds gs v = 20v, v = 0v electrical characteristics - p-channel - q , bss84 parameter symbol min units drain-source breakdown voltage t = 25c unless otherwise noted conditions typ max bv dss d i = -250a, v = 0v zero gate voltage drain curren t i ds s v = -50v, v = 0v, t =25c ds gate-body leakage -50 - - v - - -15 - - -60 a - 10 na - -0.1 -- off characteristics (note 3) i gss ds ds v = -50v, v = 0v, t =125c v = -25v, v = 0v, t =25c gs gs gs j j j j d parameter symbol min units gate threshold voltage conditions typ max v gs(th) ds v = v , i = -1ma forward transconductance -0.8 1.44 -2.0 v on characteristics (note 3) g fs gs d 0.05 - - s static drain-source on-resistanc e r ds(on) gs v = -5v, i = -0.1a - 3.8 10 ohms d parameter symbol min units input capacitance conditions typ max c iss reverse transfer capacitance - - 45 pf dynamic characteristics c rss - -12pf output capacitance c oss ds v = -25v, v = 0v, f = 1.0mhz - - 25 pf gs parameter symbol min units turn-on delay time conditions typ max t d(on) - 7.5 - ns switching characteristics turn-off delay time - 25 - ns t d(off) v = -30v, i = -0.27a, r = 50ohm, v = -10v dd d gen gs note 3. short duration test pulse used to minimize self-heating gs bss8402dw 2 www.panjit.com 9/15/2005 page 3
0.8 0.85 0.9 0.95 1 1.05 1.1 -50 -25 0 25 50 75 100 125 150 t j - junction temperature ( o c) v gs threshold voltage (normalize d i d =250 a 0.01 0.1 1 10 0.2 0.4 0.6 0.8 1 1.2 1.4 v sd - source-to-drain voltage (v) i s - source current ( a 2 5 o c v gs = 0v 0 2 4 6 8 10 246810 v gs - gate-to-source voltage (v) r ds(on) - on-resistance (ohms ) ids=50ma ids=500ma typical characteristics curves - n-channel - q , 2n7002 t = 25c unless otherwise noted j bss8402dw 1 0 0.2 0.4 0.6 0.8 1 1.2 0123456 v gs - gate-to-source voltage (v) i d - drain source current ( a v ds =10v 25 o c 0 0.2 0.4 0.6 0.8 1 012345 v ds - drain-to-source voltage (v) i d - drain-source current (a ) v gs = 6v, 7v, 8v, 9v, 10v 3.0v 4.0v 5.0v 0 2 4 6 8 10 00.20.40.60.811.2 i d - drain current (a) r ds(on) - on-resistance (ohms ) v gs = 4.5v v gs =10.0v fig. 1. output characteristics fig. 2. transfer characteristics fig. 6. sourse-drain diode forward voltage fig. 5. threshold voltage vs. temperature fig. 3. on-resistance vs. drain current fig. 4. on-resistance vs. g-s voltage www.panjit.com 9/15/2005 page 4
0.01 0.1 1 10 0.4 0.6 0.8 1 1.2 1.4 -v sd - source-to-drain voltage (v) -i s - source current (a) 25 o c v gs = 0v 0.8 0.9 1 1.1 1.2 -50 -25 0 25 50 75 100 125 150 t j - junction temperature ( o c) v gs threshold voltage (normalize d i d =250 a 0 2 4 6 8 10 246810 -v gs - gate-to-source voltage (v) r ds(on) - on-resistance (ohms ) ids =- 50ma ids =- 500ma 0 2 4 6 8 10 0 0.2 0.4 0.6 0.8 1 -i d - drain current (a) r ds(on) - on-resistance (ohms ) v gs = 4.5v v gs =10.0v 0 0.2 0.4 0.6 0.8 1 01234567 -v gs - gate-to-source voltage (v) -i d - drain source current (a ) v ds =10v 25 o c 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 012345 -v ds - drain-to-source voltage (v) -i d - drain-to-source current (a ) v gs = 6v, 7v, 8v, 9v, 10v 3.0v 4.0v 5.0v electrical characteristic curves - p-channel - q , bss84 t = 25c unless otherwise noted j bss8402dw 2 www.panjit.com 9/15/2005 page 5 fig. 1. output characteristics fig. 2. transfer characteristics fig. 6. sourse-drain diode forward voltage fig. 5. threshold voltage vs. temperature fig. 3. on-resistance vs. drain current fig. 4. on-resistance vs. g-s voltage
www.panjit.com 9/15/2005 page 6 bss8402dw ordering information bss8402dw t/r7: 7 inch reel, 3k units per reel, pin 1 towards tape sprocket holes bss8402dw t/r7-r: 7 inch reel, 3k units per reel, pin 1 away from tape sprocket holes copyright panjit international, inc 2005 the information presented in this document is believed to be accurate and reliable. the specifications and information herein are subject to change without notice. pan jit makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. pan jit products are not authorized for use in life support devices or systems. pan jit does not convey any license under its patent rights or rights of others. package layout and suggested pad dimensions bss8402dw t/r13: 13 inch reel, 10k units per reel, pin 1 towards tape sprocket holes bss8402dw t/r13-r: 13 inch reel, 10k units per reel, pin 1 away from tape sprocket holes
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